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	<title>admin &#8211; GaNPower</title>
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	<url>https://iganpower.com/wp-content/uploads/2016/02/cropped-logo-1-32x32.jpg</url>
	<title>admin &#8211; GaNPower</title>
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<site xmlns="com-wordpress:feed-additions:1">136096265</site>	<item>
		<title>Breakthrough testing of 1200V GaN devices from GaNPower</title>
		<link>https://iganpower.com/tektronix-advanced-semiconductor-laboratory-breakthroughtesting-of-1200v-gan-devices-from-ganpower</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Tue, 17 Sep 2024 07:23:57 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5383</guid>

					<description><![CDATA[In August this year, GaNPower introduced a new generation of high-voltage GaN devices with rated operating conditions of 1200V/20A (70mΩ) and...]]></description>
										<content:encoded><![CDATA[<p>In August this year, GaNPower introduced a new generation of high-voltage GaN devices with rated operating conditions of 1200V/20A (70mΩ) and an output current exceeding 20A at a gate voltage of 12V. This performance improvement makes GaNPower&#8217;s GaN devices comparable to silicon carbide (SiC) devices of the same specifications in terms of operating performance. Details can be found <a href="https://iganpower.com/wp-content/uploads/2024/09/English-version-TK-article.pdf" data-type="link" data-id="https://iganpower.com/wp-content/uploads/2024/09/English-version-TK-article.pdf">here</a>.</p><p><strong><em>About GanPower International Inc.</em></strong></p><p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">5383</post-id>	</item>
		<item>
		<title> GaNPower demonstrates high voltage switching at 120A </title>
		<link>https://iganpower.com/ganpower-demonstrates-high-voltage-switching-at-120a</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Mon, 19 Aug 2024 18:27:02 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5369</guid>

					<description><![CDATA[GaNPower recently released its 60A and 120A bare die series [link_to_product_page] GaNFET and GaN-IC at a voltage rating of 650V/900V, which...]]></description>
										<content:encoded><![CDATA[<p><br><br><br>GaNPower recently released its 60A and 120A bare die series [link_to_product_page] GaNFET and GaN-IC at a voltage rating of 650V/900V, which includes options to drive the Emode GaNFET at the original gate voltage of 6V [G0(6V)] or 12/15V [G1(15V)]. </p><p>Please see <a href="https://iganpower.com/wp-content/uploads/2024/08/word_news_120A_aug24.pdf">here</a> for the details.</p><p><strong><em>About GanPower International Inc.</em></strong></p><p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">5369</post-id>	</item>
		<item>
		<title>PowerStageDemonstration ofBuckConvertorUsingGP65R45T4</title>
		<link>https://iganpower.com/powerstagedemonstration-ofbuckconvertorusinggp65r45t4</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Fri, 26 Jul 2024 18:02:30 +0000</pubDate>
				<category><![CDATA[Technology]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5353</guid>

					<description><![CDATA[Details can be viewed here.]]></description>
										<content:encoded><![CDATA[<p>Details can be viewed <a href="https://iganpower.com/wp-content/uploads/2024/07/Eng_buck_p2p30A.pdf">here</a>.</p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">5353</post-id>	</item>
		<item>
		<title>Upgraded version of EMODE GaNFET</title>
		<link>https://iganpower.com/upgraded-version-of-emode-ganfet</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Mon, 15 Jul 2024 21:47:53 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5349</guid>

					<description><![CDATA[We are pleased to announce the release of an upgraded version of EMODE GaNFET (GP65R45T4) which features an enhanced gate turn-on...]]></description>
										<content:encoded><![CDATA[<p>We are pleased to announce the release of an upgraded version of EMODE GaNFET (GP65R45T4) which features an enhanced gate turn-on voltage (4V) and increased gate driving range (+/-20V). Using All-GaN-IC technology, the new device makes it easy to replace exising SJ MOFET and SiC in a pin-to-pin manner. For details, please see the following <a href="https://iganpower.com/wp-content/uploads/2024/07/GaNPower_p2p_story.pdf">app note</a>.</p><p><strong><em>About GanPower International Inc.</em></strong></p><p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">5349</post-id>	</item>
		<item>
		<title>GaNPower Breakthrough in 1200V GaNFET Dynamic Ron</title>
		<link>https://iganpower.com/ganpower-breakthrough-in-1200v-ganfet-dynamic-ron</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Tue, 04 Jun 2024 23:54:22 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5303</guid>

					<description><![CDATA[1200V GaNFET GaNPower recently demonstrates good dynamic switching performance for a wide temperature range and voltage range 25-125C, from Vbus=100-1200V, at...]]></description>
										<content:encoded><![CDATA[<p>1200V GaNFET GaNPower recently demonstrates good dynamic switching performance for a wide temperature range and voltage range 25-125C, from Vbus=100-1200V, at a switching current of 20A. Details are <a href="https://iganpower.com/wp-content/uploads/2024/06/GaNPower_3G1200V_news_Jun24.pdf">here</a>.</p><p><strong><em>About GanPower International Inc.</em></strong></p><p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.<a href="https://iganpower.com/ganpower-releases-to247-4-based-high-current-power-switches#"></a></p><p></p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">5303</post-id>	</item>
		<item>
		<title>GaNPower releases TO247-4 based high current power switches</title>
		<link>https://iganpower.com/ganpower-releases-to247-4-based-high-current-power-switches</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Fri, 05 Jan 2024 01:23:26 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5256</guid>

					<description><![CDATA[We at GaNPower are pleased to announce the release of a new class of engineering samples of high voltage (nominal 650V...]]></description>
										<content:encoded><![CDATA[<p>We at GaNPower are pleased to announce the release of a new class of engineering samples of high voltage (nominal 650V and 1200V) GaN power switches based on the TO247-4 package. Up to a maximum rated current of 120A (12 mOhm), some of these switches include driver IC intended to be driven by digital signal while others include a monolithically integrated input regulator circuit*. The ones with regulator are regarded as an upgraded discrete GaNFET such that their lead arrangement, input gate threshold voltage (Vgth=2.7V) and gate voltage driving range (Vg=-20V to 20V) match existing SiC MOSFET**. Such power switches are called P2P-GaN devices so that it can match existing SiC MOSFET in a pin to pin (P2P) fashion. Our initial double pulse test indicate that such 1200V TO247-4 devices can switch cleanly at half of its rated maximum current up to bus voltage of 1000V at up to 500kHz, making them suitable for application with bus voltage between 800-1000V. Potential customers are encouraged to contact us for engineering samples and app notes.</p><p><em><strong> </strong></em>* The P2P regulator circuit is patent pending.<br>** Although safe to drive Vg from -20 to 20V, the current version of P2P-GaN generates some heat loss when Vg is high. Best to limit the Vg to be below 10V if possible.</p><p><strong><em>About GanPower International Inc.</em></strong></p><p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">5256</post-id>	</item>
		<item>
		<title>IRAP has approved funding support for Ganpower&#8217;s project</title>
		<link>https://iganpower.com/irap-has-approved-funding-support-for-ganpowers-project</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Tue, 05 Dec 2023 18:50:11 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5230</guid>

					<description><![CDATA[We are pleased to announce that Ganpower International Inc.’s proposal for the IRAP project titled “GSense Lossless in-line current sensing for...]]></description>
										<content:encoded><![CDATA[<p>We are pleased to announce that Ganpower International Inc.’s proposal for the IRAP project titled “GSense Lossless in-line current sensing for all-GaN-IC Intelligent Power Modules” has been approved for support under the National Research Council Canada’s Industrial Research Assistance Program (NRC IRAP).</p><p><strong><em>About GanPower International Inc.</em></strong></p><p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">5230</post-id>	</item>
		<item>
		<title>GaNPower GaNFETs are being used for Samsung smartphones quick chargers</title>
		<link>https://iganpower.com/ganpower-ganfets-are-being-used-for-samsung-smartphones</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Thu, 23 Nov 2023 05:36:15 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5188</guid>

					<description><![CDATA[GaNPower is pleased to inform that after rigorous qualification procedures its GaNFETs are being used in various types of PD quick...]]></description>
										<content:encoded><![CDATA[<p>GaNPower is pleased to inform that after rigorous qualification procedures its GaNFETs are being used in various types of PD quick chargers for Samsung smartphones.</p><p><strong><em>About GanPower International Inc.</em></strong></p><p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">5188</post-id>	</item>
		<item>
		<title>GaNPower Releases GaN Power Switch With Current Sensing</title>
		<link>https://iganpower.com/ganpower-releases-gan-power-switch-with-current-sensing</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Wed, 18 Oct 2023 14:18:23 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=5124</guid>

					<description><![CDATA[GaNPower is pleased to release GaN power switch with an integrated lossless current sensing element. With unique all-GaN-IC based current sensing...]]></description>
										<content:encoded><![CDATA[<p>GaNPower is pleased to release GaN power switch with an integrated lossless current sensing element. With unique all-GaN-IC based current sensing technology, both positive and negative current sensing can be achieved. The device may be regarded as a discrete FET with integrated sensing circuit, or be regarded as belonging to the family of GaN-IC with monolithic subcircuit integration. The power switch is packaged in DFN8x8 with a maximum current rating of 60A at 650V. Typical Rdson is rated at 25mOhm. Details can be found here at <a href="https://iganpower.com/wp-content/uploads/2023/10/GPI65060DFC_v1.0-2.pdf" data-type="link" data-id="https://iganpower.com/ganhemts">GPI65060DFC</a>.</p><p><strong><em>About GanPower International Inc.</em></strong></p><p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p><p></p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">5124</post-id>	</item>
		<item>
		<title>hiside GaN-IC restocked</title>
		<link>https://iganpower.com/new-hi-side-gan_ic</link>
		
		<dc:creator><![CDATA[admin]]></dc:creator>
		<pubDate>Fri, 24 Mar 2023 23:35:26 +0000</pubDate>
				<category><![CDATA[Trends]]></category>
		<guid isPermaLink="false">https://iganpower.com/?p=4942</guid>

					<description><![CDATA[GaNPower is pleased to inform that after disruption for a period of three years due to fab capacity issues, we are...]]></description>
										<content:encoded><![CDATA[<p>GaNPower is pleased to inform that after disruption for a period of three years due to fab capacity issues, we are able to restock <a href="https://iganpower.com/ganhemts" target="_blank" rel="noreferrer noopener">the hiside GaN-IC</a>. Our hiside IC used edge trigger method and a pair of signal transformers to offer easy level shifting when using monolithic GaN-IC.</p><p><strong><em>About GanPower International Inc.</em></strong></p><p>GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.</p>]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">4942</post-id>	</item>
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